 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| APTM120UM70DAG Single switch with Series diodes MOSFET Power Module SK S D VDSS = 1200V RDSon = 70m typ @ Tj = 25C ID = 171A @ Tc = 25C Application * Zero Current Switching resonant mode Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant G DK DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM120UM70DAG Rev 1 July, 2006 Max ratings 1200 171 126 684 30 80 5000 24 50 3200 Unit V A V m W A APTM120UM70DAG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C Typ VGS = 10V, ID = 85.5A VGS = VDS, ID = 30mA VGS = 30 V, VDS = 0V 70 3 Max 1.5 6 80 5 600 Unit mA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 171A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 171A R G =0.8 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 171A, R G = 0.8 Min Typ 43.5 6.6 1.2 1650 192 1074 20 17 245 62 7.6 6.9 13.8 8.5 Max Unit nF nC ns mJ mJ Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF Test Conditions VR=1200V IF = 240A IF = 480A IF = 240A IF = 240A VR = 800V di/dt = 800A/s Tj = 25C Tj = 125C T c = 70C Min 1200 Typ Max 750 1000 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 240 2 2.3 1.8 400 470 4.8 16 2.5 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns C www.microsemi.com 2-6 APTM120UM70DAG Rev 1 July, 2006 APTM120UM70DAG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.025 0.23 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM120UM70DAG Rev 1 July, 2006 APTM120UM70DAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.03 Thermal Impedance (C/W) 0.025 0.02 0.015 0.01 0.005 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 420 I D, Drain Current (A) ID, Drain Current (A) 360 300 240 180 120 60 0 0 5 10 15 20 25 4.5V 6V 5.5V VGS =15, 10V 7V Transfert Characteristics 480 420 360 300 240 180 120 60 0 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 ID, DC Drain Current (A) 135 90 45 0 30 TJ=125C T J=-55C T J=25C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle 5V VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current Normalized to VGS =10V @ 85.5A RDS(on) Drain to Source ON Resistance 1.4 1.3 1.2 1.1 1 0.9 0.8 0 VGS=10V V GS=20V 60 120 180 240 300 360 25 50 75 100 125 150 July, 2006 4-6 APTM120UM70DAG Rev 1 ID, Drain Current (A) TC, Case Temperature (C) www.microsemi.com APTM120UM70DAG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 420 840 1260 1680 2100 Gate Charge (nC) July, 2006 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area VGS =10V ID=85.5A 1000 limited by RDS on 100s 100 1ms 10ms 10 Single pulse TJ =150C TC=25C 1 1200 10 100 1000 VDS, Drain to Source Voltage (V) 1 Gate Charge vs Gate to Source Voltage ID=171A TJ=25C VDS=240V VDS=600V VDS=960V 10000 Coss Crss 1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTM120UM70DAG Rev 1 APTM120UM70DAG Delay Times vs Current 300 td(on) and td(off) (ns) 250 200 150 100 50 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) Switching Energy vs Current VDS=800V RG=0.8 T J=125C L=100H Rise and Fall times vs Current 100 t d(off) 80 VDS=800V RG=0.8 T J=125C L=100H tf tr and tf (ns) 60 40 20 0 60 90 120 150 180 210 240 270 ID, Drain Current (A) tr td(on) Switching Energy vs Gate Resistance 36 V DS=800V ID=171A T J=125C L=100H 24 Switching Energy (mJ) Switching Energy (mJ) 20 16 12 8 4 0 60 VDS=800V RG=0.8 TJ=125C L=100H Eon E off 30 24 18 12 6 Eoff Eon Eoff 90 120 150 180 210 240 270 I D, Drain Current (A) 0 1 2 3 4 5 6 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Operating Frequency vs Drain Current 150 IDR, Reverse Drain Current (A) 175 1000 TJ=150C 100 TJ=25C Frequency (kHz) 125 100 75 50 25 0 40 ZCS Hard switching VDS=800V D=50% RG=0.8 T J=125C T C=75C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 60 80 100 120 140 ID, Drain Current (A) 160 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM120UM70DAG Rev 1 |
Price & Availability of APTM120UM70DAG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |